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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04MHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The NP80N04MHE is N-channel MOS Field
Effect Transistor designed for high current
switching applications.
PART NUMBER
NP80N04MHE-S18-AY
LEAD PLATING
Pure Sn(Tin)
PACKING
Tube
50 p / tube
PACKAGE
TO-220(MP-25K)
Typ. 1.9 g
FEATURES
? Channel temperature 175 degree rated
? Super low on-state resistance
R DS(on) = 8.0 m Ω MAX. (V GS = 10 V, I D = 40 A)
? Low C iss : C iss = 2200 pF TYP.
? Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
(TO-220)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
V DSS
V GSS
40
± 20
V
V
Drain Current (DC)
Note1
I D(DC)
± 80
A
Drain Current (Pulse)
Note2
I D(pulse)
± 280
A
Total Power Dissipation (T A = 25°C)
Total Power Dissipation (T C = 25°C)
Channel Temperature
Storage Temperature
P T
P T
T ch
T stg
1.8
120
175
–55 to +175
W
W
°C
°C
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I AS
E AS
52 / 31 / 13
2.7 / 96 / 169
A
mJ
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW ≤ 10 μ s, Duty cycle ≤ 1%
3. Starting T ch = 25°C, R G = 25 Ω , V GS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17860EJ2V0DS00 (2nd edition)
Date Published May 2006 NS CP(K)
Printed in Japan
2006
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